Essential details
MOQ:10
Shipping:Air freight, land freight, sea freight
Product Code:CRY-03
Product Introduction
Product name: Lanthanum Aluminate (LaAlO3) Substrate
Lanthanum aluminate is a perovskite oxide substrate used mainly for epitaxial growth. Its lattice parameters sit close to those of several important semiconductor and superconductor materials, which is what makes it worth the extra cost over a plain oxide wafer.
Key properties:
The lattice matches YBaCuO and other high-temperature superconducting films, with a low dielectric constant and low microwave loss, which is why it is the standard substrate for microwave and superconducting devices. It has a high melting point and good hardness, so it survives high temperature growth and processing. Optical transparency is good in the ultraviolet, so it also serves UV optoelectronic work. The dielectric constant is moderate, which opens microelectronics and RF applications.
The lattice matches YBaCuO and other high-temperature superconducting films, with a low dielectric constant and low microwave loss, which is why it is the standard substrate for microwave and superconducting devices. It has a high melting point and good hardness, so it survives high temperature growth and processing. Optical transparency is good in the ultraviolet, so it also serves UV optoelectronic work. The dielectric constant is moderate, which opens microelectronics and RF applications.
One point to plan for:
Polished LaAlO3 substrates contain natural twin domains at room temperature because the crystal undergoes a phase transition at about 435 °C. This is a property of the material rather than a defect in the polishing, and it is the reason LSAT and other twin-free substrates are sometimes preferred for large-area films.
Typical use:
substrates for YBCO and other perovskite films, microwave electronic devices, and UV optoelectronic devices.
Fabrication and options:
Standard sizes 10×3 to 20×20 mm and Ø15 to Ø3", thickness 0.5 mm and 1.0 mm, orientation <100>, <110> or <111>, single or double side polished to Ra ≤ 5 Å, orientation tolerance ±0.5°. Bevelled wafers with 1° to 45° inclination on request. Packed in a Class 100 clean bag inside a Class 1000 clean room.
Standard sizes 10×3 to 20×20 mm and Ø15 to Ø3", thickness 0.5 mm and 1.0 mm, orientation <100>, <110> or <111>, single or double side polished to Ra ≤ 5 Å, orientation tolerance ±0.5°. Bevelled wafers with 1° to 45° inclination on request. Packed in a Class 100 clean bag inside a Class 1000 clean room.
Ordering:
Minimum order 10 pcs. Tell us the film material and the deposition temperature; we will confirm whether LaAlO3 or a twin-free alternative suits the process better.
Minimum order 10 pcs. Tell us the film material and the deposition temperature; we will confirm whether LaAlO3 or a twin-free alternative suits the process better.
Product Parameter：
Material | Lanthanum aluminate, LaAlO3 single crystal
Crystal structure | Rhombohedral at room temperature (M6), cubic above 435 °C (M3)
Lattice constant | M6: a = 5.357 Å, c = 13.22 Å; M3: a = 3.821 Å
Melting point | 2080 °C
Density | 6.52 g/cm3
Mohs hardness | 6-6.5
Thermal expansion | 9.4 × 10-6 /°C
Dielectric constant | 21
Loss tangent | about 3 × 10-4 at 300 K and 0.6 × 10-4 at 77 K, 10 GHz
Color and appearance | Brown to brownish depending on annealing; polished substrates show natural twin domains
Chemical stability | Insoluble in mineral acids at room temperature; soluble in H3PO4 above 150 °C
Growth method | Czochralski
Size | 10×3, 10×5, 10×10, 15×15, 20×15, 20×20 mm; Ø15, Ø20, Ø1", Ø2", Ø2.6", Ø3"
Thickness | 0.5 mm, 1.0 mm
Polishing | Single side or double side
Orientation | <100>, <110>, <111>
Orientation accuracy | ±0.5°; edge orientation 2°, or 1° on special requirement
Bevelled wafer | 1° to 45° inclination on request
Surface roughness | Ra ≤ 5 Å over 5×5 µm
Packaging | Class 100 clean bag, Class 1000 clean room
Minimum order | 10 pcs
Crystal structure | Rhombohedral at room temperature (M6), cubic above 435 °C (M3)
Lattice constant | M6: a = 5.357 Å, c = 13.22 Å; M3: a = 3.821 Å
Melting point | 2080 °C
Density | 6.52 g/cm3
Mohs hardness | 6-6.5
Thermal expansion | 9.4 × 10-6 /°C
Dielectric constant | 21
Loss tangent | about 3 × 10-4 at 300 K and 0.6 × 10-4 at 77 K, 10 GHz
Color and appearance | Brown to brownish depending on annealing; polished substrates show natural twin domains
Chemical stability | Insoluble in mineral acids at room temperature; soluble in H3PO4 above 150 °C
Growth method | Czochralski
Size | 10×3, 10×5, 10×10, 15×15, 20×15, 20×20 mm; Ø15, Ø20, Ø1", Ø2", Ø2.6", Ø3"
Thickness | 0.5 mm, 1.0 mm
Polishing | Single side or double side
Orientation | <100>, <110>, <111>
Orientation accuracy | ±0.5°; edge orientation 2°, or 1° on special requirement
Bevelled wafer | 1° to 45° inclination on request
Surface roughness | Ra ≤ 5 Å over 5×5 µm
Packaging | Class 100 clean bag, Class 1000 clean room
Minimum order | 10 pcs
