Transparency runs across a wide band from ultraviolet to infrared, and the material keeps its performance in high temperature and chemically corrosive environments. The thermal expansion coefficient is relatively low, so the substrate changes size little with temperature, which matters for keeping microelectronic and optoelectronic devices stable. The lattice constant matches several important semiconductors including GaN, which makes it a workable substrate for growing them. Electrical insulation is good, so it also serves as an insulating layer in electronic equipment.
Standard sizes 10×3 to 20×20 mm and Ø1" to Ø2", thickness 0.5 mm and 1.0 mm, orientation <100>, <110> or <111> at ±0.5°, single or double side polished to Ra ≤ 5 Å. Bevelled wafers with 1° to 45° inclination on request. Packed in a Class 100 clean bag inside a Class 1000 clean room.
Minimum order 10 pcs. Send the orientation, size and thickness; optical grade and epitaxy grade are quoted separately.
Growth method | Czochralski
Crystal structure | Cubic
Lattice constant | a = 8.085 Å
Melting point | 2130 °C
Density | 3.64 g/cm3
Mohs hardness | 8
Colour | White, transparent
Thermal expansion | 7.45 × 10-6 /K
Size | 10×3, 10×5, 10×10, 15×15, 20×15, 20×20 mm; Ø1", Ø2"
Thickness | 0.5 mm, 1.0 mm
Polishing | Single side or double side
Orientation | <100>, <110>, <111> at ±0.5°
Crystal plane orientation accuracy | ±0.5°; edge orientation 2°, or 1° on special requirement
Bevelled wafer | 1° to 45° inclination on request
Surface roughness | Ra ≤ 5 Å over 5×5 µm
Packing | Class 100 clean bag, Class 1000 clean room
Minimum order | 10 pcs

