The lattice match to Fe, Ni and Co reduces misfit during film growth, so single crystal metal films of good quality can be formed on it. Transparency runs from ultraviolet to infrared, and the material combines high dielectric strength, thermal stability, chemical stability and high hardness. The high dielectric constant allows it to serve as a gate dielectric in MOS devices, and the structure is close enough to some high-temperature superconductors that it also works as a substrate for those films.
Standard sizes 5×5, 10×10, 20×20 and 30×30 mm and Ø50.8 mm, thickness 0.5 mm and 1.0 mm, orientation <001>, <110> or <111>, single or double side polished to Ra ≤ 5 Å, orientation accuracy ±0.5°. Packed in a Class 100 clean bag inside a Class 1000 clean room.
Minimum order 10 pcs. Send the film material and the size; MgO is quoted with the edge finish that suits the handling you plan.
Growth method | Special arc melting
Crystal structure | Cubic, rock-salt type
Lattice constant | a = 4.130 Å
Melting point | 2800 °C
Purity | 99.95%
Density | 3.58 g/cm3
Mohs hardness | 5.5
Thermal expansion | 11.2 × 10-6 /°C
Cleavage plane | <100>
Optical transmission | above 90% from 200 to 1000 nm
Dielectric constant | 9.65
Thermal conductivity | 36 W/m·K at 300 K
Size | 5×5, 10×10, 20×20, 30×30 mm; Ø50.8 mm
Thickness | 0.5 mm, 1.0 mm
Polishing | Single side or double side
Orientation | <001>, <110>, <111>
Crystal plane orientation accuracy | ±0.5°; edge orientation 2°, or 1° on special requirement
Surface roughness | Ra ≤ 5 Å over 5×5 µm
Packing | Class 100 clean bag, Class 1000 clean room
Minimum order | 10 pcs

