Essential details
MOQ:10
Shipping:Air freight, land freight, sea freight
Product Code:CRY-01
Product Introduction
Product name: Sapphire (Al2O3) Substrate
Sapphire is the single crystal form of aluminium oxide, chosen where hardness, optical transmission and electrical insulation are needed at the same time. We supply it as oriented wafers in C-plane, A-plane, R-plane and M-plane, as round wafers or as square substrates cut to drawing.
Key properties:
Mohs hardness is 9, second only to diamond, which makes it a durable window and wear part. The material is an electrical insulator and holds its performance under high frequency, high temperature and high pressure, so it works as an insulating substrate in electronic devices. It transmits about 80% from 400 to 4000 nm, from the deep ultraviolet through to the infrared. Thermal conductivity is high and the chemical properties are stable, so the wafer holds up under high temperature and corrosive process environments. The crystal structure is stable and the material is non-radioactive, so a substrate does not affect the electrical behaviour of the device built on it.
Mohs hardness is 9, second only to diamond, which makes it a durable window and wear part. The material is an electrical insulator and holds its performance under high frequency, high temperature and high pressure, so it works as an insulating substrate in electronic devices. It transmits about 80% from 400 to 4000 nm, from the deep ultraviolet through to the infrared. Thermal conductivity is high and the chemical properties are stable, so the wafer holds up under high temperature and corrosive process environments. The crystal structure is stable and the material is non-radioactive, so a substrate does not affect the electrical behaviour of the device built on it.
Typical use:
buffer layer growth for Y-series and La-series high-temperature superconducting films, and for MgB2 superconducting films; also GaN-based epitaxy, optical windows, prisms and wear components.
Fabrication and options:
Standard sizes are 10×3, 10×5, 10×10, 15×15, 20×15 and 20×20 mm in 0.5 mm and 1.0 mm thickness, single or double side polished to Ra ≤ 5 Å over 5×5 µm, orientation tolerance ±0.5°. Round wafers, other thicknesses, steps and coatings can be produced to drawing. Every wafer is packed in a Class 100 clean bag inside a Class 1000 clean room.
Standard sizes are 10×3, 10×5, 10×10, 15×15, 20×15 and 20×20 mm in 0.5 mm and 1.0 mm thickness, single or double side polished to Ra ≤ 5 Å over 5×5 µm, orientation tolerance ±0.5°. Round wafers, other thicknesses, steps and coatings can be produced to drawing. Every wafer is packed in a Class 100 clean bag inside a Class 1000 clean room.
Ordering:
Minimum order 10 pcs. Send the plane, size, thickness, polish (one side or two sides) and quantity. Custom sizes are quoted from the drawing; tell us the film you are growing and we will confirm the plane that matches it.
Minimum order 10 pcs. Send the plane, size, thickness, polish (one side or two sides) and quantity. Custom sizes are quoted from the drawing; tell us the film you are growing and we will confirm the plane that matches it.
Product Parameter:
Material | Sapphire, Al2O3 single crystal
Crystal structure | Hexagonal
Lattice constant | a = 4.748 Å, c = 12.97 Å
Growth method | Czochralski, Kyropoulos
Density ｜ 3.98 g/cm3
Melting point | 2040 °C
Mohs hardness | 9
Refractive index | 1.762 (∥C) and 1.770 (⊥C) at 630 nm, 300 K
Thermal expansion | 5.8 × 10-6 /K
Thermal conductivity | 0.055 at 23 °C and 0.060 at 26 °C (⊥c); 0.040 at 77 °C and 0.041 at 70 °C (//c), cal/(cm·s·°C)
Transmittance | 80% at 400-4000 nm
Loss tangent | 1 × 10-4 at 1 MHz, 293 K
Dielectric constant | 11.5 (∥C), 9.3 (⊥C) at 25 °C, 10^3-10^9 Hz
Available planes | A-plane <11-20>, R-plane <1-102>, M-plane <10-10>, C-plane <0001>
Orientation tolerance | ±0.5°
Standard size | 10×3, 10×5, 10×10, 15×15, 20×15, 20×20 mm
Standard thickness | 0.5 mm, 1.0 mm
Polishing | Single side or double side, Ra ≤ 5 Å over 5×5 µm
Packing | Class 100 clean bag, Class 1000 clean room
Minimum order | 10 pcs
Crystal structure | Hexagonal
Lattice constant | a = 4.748 Å, c = 12.97 Å
Growth method | Czochralski, Kyropoulos
Density ｜ 3.98 g/cm3
Melting point | 2040 °C
Mohs hardness | 9
Refractive index | 1.762 (∥C) and 1.770 (⊥C) at 630 nm, 300 K
Thermal expansion | 5.8 × 10-6 /K
Thermal conductivity | 0.055 at 23 °C and 0.060 at 26 °C (⊥c); 0.040 at 77 °C and 0.041 at 70 °C (//c), cal/(cm·s·°C)
Transmittance | 80% at 400-4000 nm
Loss tangent | 1 × 10-4 at 1 MHz, 293 K
Dielectric constant | 11.5 (∥C), 9.3 (⊥C) at 25 °C, 10^3-10^9 Hz
Available planes | A-plane <11-20>, R-plane <1-102>, M-plane <10-10>, C-plane <0001>
Orientation tolerance | ±0.5°
Standard size | 10×3, 10×5, 10×10, 15×15, 20×15, 20×20 mm
Standard thickness | 0.5 mm, 1.0 mm
Polishing | Single side or double side, Ra ≤ 5 Å over 5×5 µm
Packing | Class 100 clean bag, Class 1000 clean room
Minimum order | 10 pcs
