Substrate materials: Al₂O₃, AlN, Si, SiO₂

Front and backside metallization with high-frequency microstrip circuit patterns

Metallic thin film stacks: Ti/Pt/Au, TiW/Au

Compatible with mainstream packaging processes including AuSn soldering and PbSn soldering

Minimum metal line width: 1 μm

Minimum precision: ±1 μm

Fabricated by PVD process

Thermal conductivity: 170 W/m·K, 200 W/m·K, 230 W/m·K

Double-sided precision lapping & thinning, Ra < 30 nm

Single-sided or double-sided AuSn solder preform

Metallic thin film systems: Ti/Pt/Au, TiW/Au, TiWPt/Au

Combines thin-film circuitry with DPC (Direct Plated Copper) process;

high-resolution thick copper process with minimum line width down to 10 μm.

DPC thickness: 75±10 μm, symmetric sandwich structure with uniform top and bottom layers.

Substrate material adopts monocrystalline SiC with thermal conductivity greater than 350 W/m·K.

Single-sided or double-sided AuSn solder available.

Metallic thin film stacks: Ti/Pt/Au, TiW/Au.

Combines thin-film circuitry with DPC (Direct Plated Copper) process, featuring high-resolution thick copper processing with minimum line width down to 10 μm.

Polycrystalline / monocrystalline diamond substrate optional upon request;

Thermal conductivity: 600 / 800 / 1200 / 1500 / 1800 W/m·K;

Single-side polishing: Ra < 300 nm; Double-side polishing: Ra < 30 nm;

Metallic thin film stacks: Ti/Pt/Au, TiW/Au;

Comprehensively designed metallization system ensuring reliable adhesion strength;

Welding options: Direct In soldering, pre-deposited Ag3.5Sn solder, or pre-deposited AuSn solder;

Typical dimensions: 3×5×0.3 (0.35) mm³, 6×6×0.3 (0.35) mm³, 10×10×0.5 mm³, or custom sizes available.